IXTA3N100D2
Part Number IXTA3N100D2
Manufacturer IXYS Corporation
Description MOSFET N-CH 1000V 3A D2PAK
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ECAD Model
Datasheets IXTA3N100D2.pdf
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Technical Information of IXTA3N100D2
Manufacturer Part Number IXTA3N100D2 Category Discrete Semiconductor
Manufacturer IXYS Corporation Description MOSFET N-CH 1000V 3A D2PAK
Package / Case Tube Quantity Available Available Stock
Vgs(th) (Max) @ Id - Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package TO-263 (IXTA)
Series - Rds On (Max) @ Id, Vgs 5.5 Ohm @ 1.5A, 0V
Power Dissipation (Max) 125W (Tc) Packaging Tube
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 37.5nC @ 5V FET Type N-Channel
FET Feature Depletion Mode Drive Voltage (Max Rds On, Min Rds On) -
Drain to Source Voltage (Vdss) 1000V (1kV) Current - Continuous Drain (Id) @ 25°C 3A (Tc)
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