TK12A60D(STA4,Q,M)
Part Number TK12A60D(STA4,Q,M)
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 600V 12A TO-220SIS
Quantity Available Request Stock & Quotation
ECAD Model
Datasheets 1.TK12A60D(STA4,Q,M).pdf2.TK12A60D(STA4,Q,M).pdf
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Technical Information of TK12A60D(STA4,Q,M)
Manufacturer Part Number TK12A60D(STA4,Q,M) Category Discrete Semiconductor
Manufacturer Toshiba Semiconductor and Storage Description MOSFET N-CH 600V 12A TO-220SIS
Package / Case Tube Quantity Available Available Stock
Vgs(th) (Max) @ Id 4V @ 1mA Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220SIS Series π-MOSVII
Rds On (Max) @ Id, Vgs 550 mOhm @ 6A, 10V Power Dissipation (Max) 45W (Tc)
Packaging Tube Package / Case TO-220-3 Full Pack
Operating Temperature 150°C (TJ) Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1800pF @ 25V Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
FET Type N-Channel FET Feature -
Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 12A (Ta)
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