TK12A60D(STA4,Q,M) | |
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Part Number | TK12A60D(STA4,Q,M) |
Manufacturer | Toshiba Semiconductor and Storage |
Description | MOSFET N-CH 600V 12A TO-220SIS |
Quantity Available | Request Stock & Quotation |
ECAD Model | |
Datasheets | 1.TK12A60D(STA4,Q,M).pdf2.TK12A60D(STA4,Q,M).pdf |
TK12A60D(STA4,Q,M) Price |
Request Price & Lead Time Online or Email us: Info@ariat.hk |
Technical Information of TK12A60D(STA4,Q,M) | |||
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Manufacturer Part Number | TK12A60D(STA4,Q,M) | Category | Discrete Semiconductor |
Manufacturer | Toshiba Semiconductor and Storage | Description | MOSFET N-CH 600V 12A TO-220SIS |
Package / Case | Tube | Quantity Available | Available Stock |
Vgs(th) (Max) @ Id | 4V @ 1mA | Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220SIS | Series | π-MOSVII |
Rds On (Max) @ Id, Vgs | 550 mOhm @ 6A, 10V | Power Dissipation (Max) | 45W (Tc) |
Packaging | Tube | Package / Case | TO-220-3 Full Pack |
Operating Temperature | 150°C (TJ) | Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V | Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
FET Type | N-Channel | FET Feature | - |
Drain to Source Voltage (Vdss) | 600V | Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
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