| TPN4R303NL,L1Q | |
|---|---|
| Part Number | TPN4R303NL,L1Q |
| Manufacturer | Toshiba Semiconductor and Storage |
| Description | MOSFET N-CH 30V 63A 8TSON |
| Quantity Available | 2000 pcs new original in stock. Request Stock & Quotation |
| ECAD Model | |
| Datasheets | TPN4R303NL,L1Q.pdf |
| TPN4R303NL,L1Q Price |
Request Price & Lead Time Online or Email us: Info@ariat.hk |
| Technical Information of TPN4R303NL,L1Q | |||
|---|---|---|---|
| Manufacturer Part Number | TPN4R303NL,L1Q | Category | Discrete Semiconductor |
| Manufacturer | Toshiba Semiconductor and Storage | Description | MOSFET N-CH 30V 63A 8TSON |
| Package / Case | Tape & Reel (TR) | Quantity Available | 2000 pcs |
| Vgs(th) (Max) @ Id | 2.3V @ 200µA | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | 8-TSON Advance (3.3x3.3) |
| Series | U-MOSVIII-H | Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 20A, 10V |
| Power Dissipation (Max) | 700mW (Ta), 34W (Tc) | Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN | Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 14.8nC @ 10V | FET Type | N-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30V | Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
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