| SI3127DV-T1-GE3 | |
|---|---|
| Part Number | SI3127DV-T1-GE3 |
| Manufacturer | Vishay Siliconix |
| Description | MOSFET P-CHAN 60V TSOP6S |
| Quantity Available | 9870 pcs new original in stock. Request Stock & Quotation |
| ECAD Model | |
| Datasheets | SI3127DV-T1-GE3.pdf |
| SI3127DV-T1-GE3 Price |
Request Price & Lead Time Online or Email us: Info@ariat.hk |
| Technical Information of SI3127DV-T1-GE3 | |||
|---|---|---|---|
| Manufacturer Part Number | SI3127DV-T1-GE3 | Category | Discrete Semiconductor |
| Manufacturer | Vishay Siliconix | Description | MOSFET P-CHAN 60V TSOP6S |
| Package / Case | Tape & Reel (TR) | Quantity Available | 9870 pcs |
| Vgs(th) (Max) @ Id | 3V @ 250µA | Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) | Supplier Device Package | 6-TSOP |
| Series | TrenchFET® | Rds On (Max) @ Id, Vgs | 89 mOhm @ 1.5A, 4.5V |
| Power Dissipation (Max) | 2W (Ta), 4.2W (Tc) | Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Input Capacitance (Ciss) (Max) @ Vds | 833pF @ 20V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | FET Type | P-Channel |
| FET Feature | - | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 60V | Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta), 13A (Tc) |
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