| JAN1N5807US | |
|---|---|
| Part Number | JAN1N5807US |
| Manufacturer | Microsemi |
| Description | DIODE GEN PURP 50V 6A B-MELF |
| Quantity Available | Request Stock & Quotation |
| ECAD Model | |
| Datasheets | JAN1N5807US.pdf |
| JAN1N5807US Price |
Request Price & Lead Time Online or Email us: Info@ariat.hk |
| Technical Information of JAN1N5807US | |||
|---|---|---|---|
| Manufacturer Part Number | JAN1N5807US | Category | Discrete Semiconductor |
| Manufacturer | Microsemi | Description | DIODE GEN PURP 50V 6A B-MELF |
| Package / Case | Bulk | Quantity Available | Available Stock |
| Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A | Voltage - DC Reverse (Vr) (Max) | 50V |
| Supplier Device Package | B, SQ-MELF | Speed | Fast Recovery = 200mA (Io) |
| Series | Military, MIL-PRF-19500/477 | Reverse Recovery Time (trr) | 30ns |
| Packaging | Bulk | Package / Case | SQ-MELF, B |
| Operating Temperature - Junction | -65°C ~ 175°C | Mounting Type | Surface Mount |
| Diode Type | Standard | Current - Reverse Leakage @ Vr | 5µA @ 50V |
| Current - Average Rectified (Io) | 6A | Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
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