RN2710JE(TE85L,F) | |
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Part Number | RN2710JE(TE85L,F) |
Manufacturer | Toshiba Semiconductor and Storage |
Description | TRANS 2PNP PREBIAS 0.1W ESV |
Quantity Available | Request Stock & Quotation |
ECAD Model | |
Datasheets | RN2710JE(TE85L,F).pdf |
RN2710JE(TE85L,F) Price |
Request Price & Lead Time Online or Email us: Info@ariat.hk |
Technical Information of RN2710JE(TE85L,F) | |||
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Manufacturer Part Number | RN2710JE(TE85L,F) | Category | Discrete Semiconductor |
Manufacturer | Toshiba Semiconductor and Storage | Description | TRANS 2PNP PREBIAS 0.1W ESV |
Package / Case | Tape & Reel (TR) | Quantity Available | Available Stock |
Voltage - Collector Emitter Breakdown (Max) | 50V | Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Transistor Type | 2 PNP - Pre-Biased (Dual) (Emitter Coupled) | Supplier Device Package | ESV |
Series | - | Resistor - Emitter Base (R2) (Ohms) | - |
Resistor - Base (R1) (Ohms) | 4.7k | Power - Max | 100mW |
Packaging | Tape & Reel (TR) | Package / Case | SOT-553 |
Mounting Type | Surface Mount | Frequency - Transition | 200MHz |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | Current - Collector Cutoff (Max) | 100nA (ICBO) |
Current - Collector (Ic) (Max) | 100mA |
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