| SPB04N50C3ATMA1 | |
|---|---|
| Part Number | SPB04N50C3ATMA1 |
| Manufacturer | International Rectifier (Infineon Technologies) |
| Description | MOSFET N-CH 560V 4.5A TO-263 |
| Quantity Available | Request Stock & Quotation |
| ECAD Model | |
| Datasheets | SPB04N50C3ATMA1.pdf |
| SPB04N50C3ATMA1 Price |
Request Price & Lead Time Online or Email us: Info@ariat.hk |
| Technical Information of SPB04N50C3ATMA1 | |||
|---|---|---|---|
| Manufacturer Part Number | SPB04N50C3ATMA1 | Category | Discrete Semiconductor |
| Manufacturer | International Rectifier (Infineon Technologies) | Description | MOSFET N-CH 560V 4.5A TO-263 |
| Package / Case | Tape & Reel (TR) | Quantity Available | Available Stock |
| Vgs(th) (Max) @ Id | 3.9V @ 200µA | Technology | MOSFET (Metal Oxide) |
| Supplier Device Package | PG-TO263-3-2 | Series | CoolMOS™ |
| Rds On (Max) @ Id, Vgs | 950 mOhm @ 2.8A, 10V | Power Dissipation (Max) | 50W (Tc) |
| Packaging | Tape & Reel (TR) | Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 25V | Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| FET Type | N-Channel | FET Feature | - |
| Drain to Source Voltage (Vdss) | 560V | Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
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