TK32A12N1,S4X
Part Number TK32A12N1,S4X
Manufacturer Toshiba Semiconductor and Storage
Description MOSFET N-CH 120V 32A TO-220
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ECAD Model
Datasheets TK32A12N1,S4X.pdf
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Technical Information of TK32A12N1,S4X
Manufacturer Part Number TK32A12N1,S4X Category Discrete Semiconductor
Manufacturer Toshiba Semiconductor and Storage Description MOSFET N-CH 120V 32A TO-220
Package / Case Tube Quantity Available Available Stock
Vgs(th) (Max) @ Id 4V @ 500µA Vgs (Max) ±20V
Technology MOSFET (Metal Oxide) Supplier Device Package TO-220SIS
Series U-MOSVIII-H Rds On (Max) @ Id, Vgs 13.8 mOhm @ 16A, 10V
Power Dissipation (Max) 30W (Tc) Packaging Tube
Package / Case TO-220-3 Full Pack, Isolated Tab Operating Temperature 150°C (TJ)
Mounting Type Through Hole Input Capacitance (Ciss) (Max) @ Vds 2000pF @ 60V
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V FET Type N-Channel
FET Feature - Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 120V Current - Continuous Drain (Id) @ 25°C 32A (Tc)
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